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| Switching Diodes MA6X126 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 0.15 2.8 - 0.3 + 0.2 1.5 - 0.05 6 + 0.25 0.65 0.15 1.45 0.1 0.3 - 0.05 + 0.1 * Four-element contained in one package, allowing high-density mounting * High breakdown voltage (VR = 80 V) 1.9 0.2 0.95 0.95 2.9 - 0.05 + 0.2 5 2 4 3 1.1 - 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 -55 to +150 Unit V V mA mA mA C C 1 : Anode 3,4 4 : Cathode 1,2 2 : Anode 1 5 : Cathode 3 3 : Anode 2 6 : Cathode 4 Mini Type Package (6-pin) Marking Symbol: M2S Internal Connection 6 5 4 1 2 3 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time*3 Symbol IR VF VR Ct1*1 Ct2*2 trr1*1 trr2*2 VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 80 15 2 10 3 Conditions Min Typ Max 100 1.2 Unit nA V V pF pF ns Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 1 and 5, Between pins 1 and 6 *2 : Between pins 4 and 2, Between pins 4 and 3 *3 : trr measuring circuit Bias Application Unit N-50BU Input Pulse tr 10% tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0 to 0.1 0.1 to 0.3 0.4 0.2 0.8 0.16 - 0.06 + 0.2 I Absolute Maximum Ratings Ta = 25C 0.5 - 0.05 I Features + 0.1 + 0.1 1 1 MA6X126 IF V F 103 Between pins 1 and 5, 1 and 6 103 Between pins 2 and 4, 3 and 4 Switching Diodes IF V F 10 Ta = 150C IR V R 102 102 Forward current IF (mA) Forward current IF (mA) 1 Reverse current IR (A) 100C 10-1 10 Ta = 150C 100C 25C 10 1 - 20C 1 Ta = 150C 100C 25C 10-2 25C 10-1 10-1 - 20C 10-3 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 10-4 Between pins 1 and 5, 1 and 6 0 20 40 60 80 100 120 Forward voltage VF (V) Forward voltage VF (V) Reverse voltage VR (V) IR VR 100 Between pins 2 and 4, 3 and 4 Ta = 150C 10 VF Ta 1.6 Between pins 1 and 5, 1 and 6 1.4 1.4 1.6 VF Ta Between pins 2 and 4, 3 and 4 Reverse current IR (A) Forward voltage VF (V) Forward voltage VF (V) 100C 1 1.2 1.0 0.8 0.6 10 mA 0.4 0.2 3 mA 1.2 1.0 0.8 0.6 0.4 0.2 0 -40 IF = 100 mA IF = 100 mA 0.1 25C 0.01 10 mA 3 mA 0.001 0 20 40 60 80 100 120 0 -40 0 40 80 120 160 200 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) Ambient temperature Ta (C) IR T a 10 Between pins 1 and 5, 1 and 6 VR = 75 V 35 V 100 IR T a Between pins 2 and 4, 3 and 4 VR = 75 V 35 V 1V Ct VR 6.0 f = 1 MHz Ta = 25C 1 10 Terminal capacitance Ct (pF) 5.0 Reverse current IR (A) Reverse current IR (A) 4.0 0.1 1V 1 3.0 0.01 0.1 2.0 0.001 0.01 1.0 Between pins 2 and 4, 3 and 4 Between pins 1 and 5, 1 and 6 0.000 1 -40 0 40 80 120 160 200 0.001 -40 0 0 40 80 120 160 200 0 20 40 60 80 100 120 Ambient temperature Ta (C) Ambient temperature Ta (C) Reverse voltage VR (V) 2 Switching Diodes IF(surge) tW 1 000 300 tW MA6X126 Ta = 25C IF(surge) Forward surge current IF(surge) (A) 100 30 10 3 1 0.3 0.1 0.03 Non repetitive Between pins 1 and 5, 1 and 6 Between pins 2 and 4, 3 and 4 0.1 0.3 1 3 10 30 Pulse width tW (ms) 3 |
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